savantic semiconductor product specification silicon npn power transistors 2SD2061 d escription with to-220fa package low collector saturation voltage excellent dc current gain characteristics wide safe operating area applications for low frequency power amplifier applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 80 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 3 a i cm collector current-peak 6 a t c =25 30 p c collector power dissipation t a =25 2 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220fa) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD2061 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =1ma , i b =0 60 v v (br)cbo collector-base breakdown voltage i c =50a , i e =0 80 v v (br)ebo emitter-base breakdown voltage i e =50a , i c =0 5 v v cesat collector-emitter saturation voltage i c =2a; i b =0.2a 1.0 v v besat base-emitter saturation voltage i c =2a ;i b =0.2a 1.5 v i cbo collector cut-off current v cb =60v i e =0 10 a i ebo emitter cut-off current v eb =4v; i c =0 10 a h fe dc current gain i c =0.5a ; v ce =5v 100 320 f t transition frequency i c =0.5a ; v ce =5v;f=5mhz 8 mhz c ob output capacitance i e =0 ; v cb =10v ,f=1mhz 70 pf h fe classifications e f 100-200 160-320
savantic semiconductor product specification 3 silicon npn power transistors 2SD2061 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm)
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